| PART |
Description |
Maker |
| RM20CA-XXS RM20C1A-XXS RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率，高频率使用的绝缘
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
| CM10MD-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM30TF-12H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM20MD-12H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TM60SZ-M |
MEDIUM POWER GENERAL USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM50HA-HB |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM50CY-H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
